Dalam rangkaian analog, transistor digunakan dalam amplifier. Secara umum, transistor dapat dibeda-bedakan berdasarkan banyak kategori. Perlu diketahui bahwa dengan memiliki kumpulan datasheet transistor, maka akan sangat mudah dalam mencari persamaan transistor horizontal maupun transistor power switching untuk pesawat tv. Kegunaan persamaan ini adalah apabila mengalami kesulitan mencari jenis dan model seri dari transistor bawaan mesin tv.
![Persamaan Persamaan](/uploads/1/2/6/3/126315755/407293129.jpg)
KOMPONEN ELEKTRONIK INDUSTRI » Transistor, FET, MOSFET, IGBT
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04N70BF
17N80C3
17N80C320N60C3
20N60C3D
20N60C3D23N50E
25N50E
25N50E2N2219A 2N2219
2N2905A
2N2905A2N3440
2N3819
2N3819. N-Channel RF Amplifier. • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching2N3906
2N4391
2N43912N5457
2N5458
2N5458. Preferred Device. JFETs − General Purpose. N- Channel - Depletion. N-Channel Junction Field Effect Transistors, depletion mode2N6405
2N7000
2N70002SA1156 A1156
2SA1156 data sheet : NEC - PNP SILICON POWER TRANSISTOR2SA1244 A1244
2SA1244 Transistor Silicon PNP Epitaxial Type (PCT process). 2SA1244. High Current Switching Applications2SA1302 A1302
2SA1302 A1302 - POWER TRANSISTORS( 15A, 200V, 150W) - TOSHIBA2SA1356 A1356
2SA1356 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)2SA1492 A1492 SANKEN
2SA1492 A1492 - Silicon PNP Epitaxial Planar Transistor( Audio and General Purpose) - Sanken electric2SA1736 A1736 SOT89
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process). 2SA1736. Power Amplifier Applications. Power Switching Applications2SA503
2SA814 A814
2SA814 A8142SB533
2SB553 B553
2SB553 B5532SB676 B676 TO-220
2SB744 B744
2SB757 B757
2SB757 B757 - Silicon PNP Power Transistors - FUJI ELECTRIC TO-3P2SC1505 C1505
2SC1970 C1970
2SC1970 C1970 - NPN EPITAXIAL PLANAR TYPE( for RF power amplifiers on VHF band Mobile radio applications) - Mitsubishi Electric Semiconductor2SC1971 C1971
2SC1971 C1971 - NPN EPITAXIAL PLANAR TYPE( for RF power amplifiers on VHF band Mobile radio applications) - Mitsubishi Electric Semiconductor2SC2078 C2078
2SC2098 C2098
2SC2098 C20982SC2200 Toshiba
2SC2200 - SILICON NPN TRIPLE DIFFUSED TYPE – Toshiba Corporation, Japan2SC2336 C2336
2SC2336 C2336 - PNP/ NPN SILICON EPITAXIAL TRANSISTOR - NEC2SC2752 C2752
2SC2767 C2767
2SC2767 Silicon Power Transistors2SC3074 C3074
TOSHIBA 2SC3074. TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS). 2SC3074. HIGH CURRENT SWITCHING APPLICATIONS2SC3117 C3117
2SC3148 C3148
2SC3148 TOSHIBA - NPN TRIPLE DIFFUSED(for Switching Regulator and High Voltage)2SC3157 C3157
2SC3159 C3159
2SC3159 C3159 - Silicon NPN Power Transistors - TO-220 , NEC2SC3170 C3170
2SC3281 C3281
2SC3281 C3281 - POWER TRANSISTORS( 15A, 200V, 150W) - TOSHIBA2SC3303 C3303
2SC3303 Transistor Silicon NPN Epitaxial Type (PCT process). 2SC3303. High Current Switching Applications. DC-DC Converter2SC3306 C3306
2SC3317 C3317 Fuji Electric
2SC3320 C3320
2SC3320 C3320 - HIGH VOLTAGE HIGH SPEED SWITCHING - FUJI ELECTRIC2SC3552 C3552
2SC3688 C3688
2SC3688. N3098HA (KT)/3107KI/4156KI, TS No.1940–1/3. Specifications. Absolute Maximum Ratings at Ta = 25˚C.2SC3694 C3694
2SC3833 C3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose2SC3856 C3856 SANKEN
2SC3856 C3856 - Silicon NPN Triple Diffused Planar Transistor( Audio and General Purpose) - Sanken electric2SC3909 C3909
2SC3979A C3979A
2SC3979A C3979A2SC3988 C3988
2SC3998 C3998
2SC3998 C39982SC4063 C4063
2SC4148 C4148 Shindengen Transistors Bipolar
2SC4151 C4151
2SC4151 C41512SC4487 C4487
2SC5354 C5354 Toshiba
2SC5706 C5706
2SC5706 C5706 - NPN Silicon General Purpose Transistor - SANYO2SC797
2SC901A Matsushita
2SC901A Original New Panasonic TO-3 Transistor C901 , Panasonic Matsushita2SD1410A D1410A
2SD1444A D1444A
2SD1444A D1444A2SD1780 D1780
2SD311 Fairchild
2SD311 – NPN Power transistor TO-3, Fairchild Semiconductors2SD311 Toshiba
2SD311 – NPN Power transistor TO-3, Toshiba Semiconductor Japan2SD560 D560
2SD797 Toshiba
2SD797 TOSHIBA TO-3 SILICON NPN TRIPLE DIFFUSED - Toshiba Semiconductor2SD867 Toshiba
2SD867, TO-3 METAL PACKAGING, TOSHIBA CORPORATION JAPAN2SD970 D970 Hitachi
2SJ111 J111
2SJ112 J112 Transistor
2SJ117 J117
2SJ154 J154
2SJ154 J1542SJ175 J175
2SJ201 J201
2SJ201. TOSHIBA Field Effect Transistor Silicon P Channel MOS Type.2SK1118 K1118
TOSHIBA Discrete Semiconductors 2SK1118 Field Effect Transistor Silicon N Channel MOS Type2SK1204 K1204
2SK1217 FUJI ELECTRIC
2SK1240 K1240
2SK1277 K1277
2SK1277 K12772SK1278 K1278
2SK1279 K1279
2SK1279 K12792SK1317 K1317
2SK1317. Silicon N-Channel MOS FET. Application. High speed power switching. Features. • High breakdown voltage VDSS = 1500 V.2SK1338 K1338
2SK1358 K1358
2SK1358 K13582SK1518 K1518
2SK1522 K1522
2SK1522 K15222SK1818-MR 2SK1818 K1818 Fuji Electric
2SK1938 K1938
2SK1940 K1940
2SK1940 K19402SK2057 K2057
2SK2370 K2370
2SK2611 K2611
2SK2611 K26112SK2651 K2651 Fuji Electric
2SK2651. N-channel MOS-FET. FAP-IIS Series. 900V. 2,5Ω 6A 50W2SK2655 K2655 FUJI
2SK2850 K2850 FUJI
2SK358 K358
2SK385 K385
2SK385 K3852SK3878 K3878
2SK4110 K4110
2SK4115 K4115
2SK4115 K41152SK526 K526
2SK578 K578
2SK578. Description, TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,15A I(D),TO-2472SK644 K644
2SK790 K790
2SK790 K7902SK831 K381
2SK897 K897
2SK940 K940
32A7023F RF LABS
32A7023F Termination, Flange, 2 GHz40TPS16
AOT470 T470
AP60N03GP
AP60N03GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics Corp. apecAP9575GP 9575GP
APT30GF60BN 30GF60BN
BDT64C
BDT64CBDT65C
BDW93C
BDW93C COMPLEMENTARY SILICON POWER. DARLINGTON TRANSISTORS s. STMicroelectronicsBDW94C
BDW93C. BDW94B/BDW94C. COMPLEMENTARY SILICON POWER. DARLINGTON TRANSISTORS s. STMicroelectronicsBF871
BS170G BS170
BS170/D. BS170G. Small Signal MOSFET. 500 mA, 60 Volts. N−Channel TO−92BST76A
BTW69-1200 BTW691200
BTW69-1200 BTW691200BU408
BUF420
BUF420BUP307
BUR52 STMicroelectronics Transistors Bipolar
BUT11A
BUT11ABUV26
BUV26 - MEDIUM POWER NPN SILICON TRANSISTOR - STMicroelectronicsBUW42 BUW42A
BUX48A Motorola
BUX48A - SWITCHMODE II Series NPN Silicon Power Transistors - MotorolaBUZ102S
BUZ11
BUZ50A
BUZ50ABYW51200
CEP6030L
CEP6030LF60UP30DN
FAIRCHILD, FQA24N50, 24N60, IGBT
FDPF33N25T 33N25
FGL40N120AND FGL40N120
FK20SM10 FK20SM
FK20SM10 FK20SMFQP8N60C 8N60C 8N60
FQP9N50C 9N50
FS30SM5 FS30SM-5
G15N60RUFD G15N60 15N60
G20N50C1D
G20N50C1DG40N60UFD G40N60 40N60
G4PC50W
G7N60B3D N60B3D
G7N60B3D N60B3DG80N60UFD 80N60
GT60N321 60N321 Mesin Photo Copy
H20R1202
HGTP7N60C3 G7N60C3
IR, IRG4BC30K ,IGBT
IRF1010E F1010E TO-220
IRF240 IR
IRF240 - REPETITIVE AVALANCHE AND dv/ dt RATED - International RectifierIRF460
IRF520PBF IRF520
IRF640
IRF640IRF710
IRF740B
IRF9530NPBF IRF9530N
IRF9530NPBF IRF9530NIRFB31N20DPBF FB31N20D
IRFB31N20DPBF FB31N20D - HEXFET Power MOSFET ( VDSS = 200V , RDS( on) max = 0.082© , ID = 31A ) - International Rectifier DIP TO-220IRFB4410Z IRFB4410
IRFBE30
IRFD120
IRFD120 - HEXFET Power MOSFET - International RectifierIRFP450
IRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247. PowerMESH™ MOSFET s. TYPICAL RDS(on) = 0.33 Ω s. EXTREMELY HIGH dv/dt CAPABILITYIRFP450
IRFP9140N IRFP9140
IRFS840B IRFS840
IRFU220
IRFU220IRFZ44N replacement FTP16N06A
IRFZ44N, HEXFET, Power MOSFET, replacement FTP16N06AIRG4PC50F G4PC60F
IRG4PC50U G4PC50U
IRG4PC50U. UltraFast Speed IGBT. INSULATED GATE BIPOLAR TRANSISTOR. PD 91470F. E. C. G n-channel. TO-247ACIRG4PF50WD G4PF50WD
IXFH50N60P3 50N60P3 50N60 IXYS
IXYS IXFH15N80Q 15N80
K30N60HS
K30N60HSK3530 2SK3530 FE Fuji Electric
K75T60 Infineon
KA5H0265RC 5H0265RC
KA5H0265RC 5H0265RCLM2678T-ADJ
LM2678T-ADJ
LM61BIZ
ME75N80C 75N80C
MIP0125SY
MIP172
MJ11012 MOTOROLA
MJ11012 - DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON – motorolaMJ16014 Motorola
MJ16014 ON
MJ16014 - isc Silicon NPN Power Transistor – ON SemiconductorMJE15030
MJE15032
MJE15033
MJE15034
MJE15035
MJE800 JE800
MJE800 JE800MPS2222A MPS2222
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 packageMPSA92 A92
MTM35N05 Motorola
MTM35N05 , POWER MOSFET, MOTOROLA SEMICONDUCTORSMTP75N03HDL 5N03HDL
NEC 2SC3568 C3568
NEC 2SC3568P16NE06
P16NE06FP
P16NE06FPP16NE06FP
P40N10 40N10
P4NB80FP
P55NE06
P55NE06P6NK60ZFP
P7NK80Z
STMICROELECTRONICS - N-channel 800V - 1.5Ω - 5.2A - TO-220RFP25N06
RJH60F5BDPQ-AO RJH60F5
RN1002 1002 Transistor
SANKEN, 2SC2761 , C2761
SPP11N80C3 11N80C3
SPP11N80C3 11N80C3SPW17N80C3 17N80C3
SSP3N60 3N60
Mosfet SSP3N60 T0-220 FAIRCHILD TransistorST, GF3NC120HD, 3NC120, IGBT
STW11NB80 W11NB80
STMicro. ST. Part No. STW11NB80 . Description, N-CHANNEL 800V - 0.65 - 11A - T0-247 PowerMESH TM MOSFETSTW14NC50 W14NC50
STW15NB50 W15NB50
W15NB50 STMICROELECTRONICS - N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247TIC126M TIC126
TIC126M TIC126 - SILICON CONTROLLED RECTIFIERS - Power Innovations LtdTIP132
TIPP112
TIPP112 - NPN SILICON POWER DARLINGTONS - Power Innovations LtdVN0300
ZTX605
ZTX605 - NPN SILICON PLANAR MEDIUM POWER( DARLINGTON TRANSISTORS) - Zetex Semiconductors
![Persamaan umum untuk transistor 1 Persamaan umum untuk transistor 1](http://4.bp.blogspot.com/-7hqGWJtavIQ/TfTmoBQJbjI/AAAAAAAABPs/4oogwOSLQHA/s1600/tabel-transistor-daya.png)
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